Rsearchers from the University of Texas at Austin and Northwestern University have demonstrated a new method to improve the reliability and performance of transistors and circuits based on carbon nanotubes (CNT), a semiconductor material that has long been considered by scientists as one of the most promising successors to silicon for smaller, faster and cheaper electronic devices. The result appears in a new paper published in the journal Applied Physics Letters, from AIP Publishing.
In the paper, researchers examined the effect of a fluoropolymer coating called PVDF-TrFE on single-walled carbon nanotube (SWCNT) transistors and ring oscillator circuits, and demonstrated that these coatings can substantially improve the performance of single-walled carbon nanotube devices. PVDF-TrFE is also known by its long chemical name polyvinyledenedifluoride-tetrafluoroethylene.
"We attribute the improvements to the polar nature of PVDF-TrFE that mitigates the negative effect of impurities and defects on the performance of semiconductor single-walled carbon nanotubes," said Ananth Dodabalapur, a professor in the Cockrell School of Engineering at UT Austin who led the research. "The use of [PVDF-TrFE] capping layers will be greatly beneficial to the adoption of single-walled carbon nanotube circuits in printed electronics and flexible display applications."
The work was done in collaboration between Dodabalapur's group at UT Austin and Mark Hersam's group at Northwestern University as part of a Multi-University Research Initiative (MURI) supported by the Office of Naval Research.
A potential successor to silicon chips
Single-walled carbon nanotubes (SWCNT) are just about the thinnest tubes that can be wrought from nature. They are cylinders formed by rolling up a material known as graphene, which is a flat, single-atom-thick layer of carbon graphite. Most single-walled carbon nanotubes typically have a diameter close to 1 nanometer and can be twisted, flattened and bent into small circles or around sharp bends without breaking. These ultra-thin carbon filaments have high mobility, high transparency and electric conductivity, making them ideal for performing electronic tasks and making flexible electronic devices like thin film transistors, the on-off switches at the heart of digital electronic systems.
"Single-walled carbon nanotube field-effect transistors (FETs) have characteristics similar to polycrystalline silicon FETs, a thin film silicon transistor currently used to drive the pixels in organic light-emitting (OLED) displays," said Mark Hersam, Dodabalapur's coworker and a professor in the McCormick School of Engineering and Applied Science at Northwestern University. "But single-walled carbon nanotubes are more advantageous than polycrystalline silicon in that they are solution-processable or printable, which potentially could lower manufacturing costs."
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